NITRIDE BASED SEMICONDUCTOR DEVICE

摘要

Disclosed herein is a nitride based semiconductor device. There is provided a nitride based semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; and an electrode structure disposed on the semiconductor layer, wherein the electrode structure includes: a cathode structure ohmic-contacting the semiconductor layer; and an anode structure having a schottky electrode schottky-contacting the semiconductor layer and an ohmic electrode ohmic-contacting the nitride layer.