SILICON OXYNITRIDE FILM AND METHOD FOR FORMING SAME, AND SEMICONDUCTOR DEVICE

摘要

Provided is an insulating film that does not contain hydrogen or free fluorine and has good film properties. The silicon oxynitride film relating to the present invention contains silicon, nitrogen, oxygen and fluorine such that, in terms of the silicon (S), nitrogen (N), oxygen (O), and fluorine (F) total (N+O+F) elemental percentage, (N+O+F)/Si is within a range of 1.93 to 1.48, and the silicon oxynitride film has a silicon elemental percentage ranging from 0.34 to 0.41, nitrogen elemental percentage ranging from 0.10 to 0.22, oxygen elemental percentage ranging from 0.14 to 0.38, and fluorine elemental percentage ranging from 0.17 to 0.24. This film can be formed on a substrate (20) by inductive coupling-type plasma CVD whereby plasma (40) is formed by inductive coupling using silicon tetrafluoride gas, nitrogen gas, and oxygen gas as a starting material gas (28).