发明名称 |
METHOD FOR CONTROLLING CRYSTALLIZATION OF HF-OXIDE LAYER FROM SUCCEEDING THERMAL TREATMENT AND METHOD OF BARRIER FOR SUPPRESSING IMPURITIES DIFFUSION FOR FROM THE SAME |
摘要 |
PURPOSE: A hafnium oxide film crystallization control method and an impurity diffusion suppressing layer formation method are provided to improve capacitance by crystallization properties of hafnium oxide. CONSTITUTION: A hafnium oxide film is deposited on a III-V group compound semiconductor substrate. A subsequent NH3 gas heat treatment process is performed for crystallization of hafnium oxide. A III-V group compound is selected among gallium arsenide(GaAs), indium gallium arsenide, aluminum gallium arsenide, and indium phosphate. The NH3 gas heat treatment process is performed for 0.5 to 2 minutes under an NH3 atmosphere with a temperature range of 500 to 700°C.
|
申请公布号 |
KR20120062220(A) |
申请公布日期 |
2012.06.14 |
申请号 |
KR20100123383 |
申请日期 |
2010.12.06 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
CHO, MANN HO;KIM, CHUNG YI;KANG, YU SEON;KO, DAE HONG |
分类号 |
H01L21/3105;H01L21/336;H01L29/78 |
主分类号 |
H01L21/3105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|