发明名称 |
FORMATION OF GATE DIELECTRICS WITH UNIFORM NITROGEN DISTRIBUTION |
摘要 |
The present invention provides a method for manufacturing a gate dielectric (710) that includes providing a nitrided dielectric layer (220) over a substrate (120). The nitrided dielectric layer (220) has a nonuniform concentration of nitrogen in a bulk thereof. The nitrided dielectric layer (220) is exposed to oxygen radicals (410), resulting in a reduction of the non-uniformity. |
申请公布号 |
US2012149186(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113236121 |
申请日期 |
2011.09.19 |
申请人 |
NIIMI HIROAKI;LAAKSONEN REIMA T.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NIIMI HIROAKI;LAAKSONEN REIMA T. |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|