SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

A semiconductor device (100A) of the present invention has: a thin film transistor (10); a first insulating layer (9) formed on the thin film transistor (10); a second insulating layer (11), which is formed on the first insulating layer (9), and which has an opening (21a); and a light blocking layer (12a), which is formed to overlap an oxide semiconductor layer (5) when viewed from the normal direction of a substrate (1). The light blocking layer (12a) is formed in the opening (21a), the upper surface of the light blocking layer (12a) has the convex curved surface, and the upper surface of the second insulating layer (11) is further toward the substrate (1) side than the upper surface of the light blocking layer (12a).