SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device contains a P-type FET that is formed in an N-type active region (103a) of a semiconductor substrate (100). The P-type FET comprises a gate insulating film (106a) that is formed on the N-type active region and a gate electrode (113a) that is formed on the gate insulating film. The gate electrode comprises a lower metal electrode layer (107a) that is formed on the gate insulating film, an upper metal electrode layer (108a) that is formed on the lower metal electrode layer, and a P-type silicon electrode (109a) that is formed on the upper metal electrode layer. The work function of a metal or metal compound that constitutes the upper metal electrode layer has such a value that the height of the Schottky barrier between the upper metal electrode layer and the P-type silicon electrode is lower than the height of the Schottky barrier that is formed in cases where the lower metal electrode layer and the P-type silicon electrode are in direct contact with each other.