| 发明名称 |
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS FOR SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a SiC semiconductor device capable of minimizing problems associated with chemical liquid and capable of improving cleaning effect, and to provide a manufacturing apparatus for the SiC semiconductor device. <P>SOLUTION: A method of manufacturing a SiC semiconductor device comprises the steps of: forming an oxide film on a surface of SiC (a step S3); and removing the oxide film (a step S5). The formation step of the oxide film (the step S3) uses an ozone gas. The removal step of the oxide film (the step S5) preferably uses halogen plasma or hydrogen plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012114210(A) |
申请公布日期 |
2012.06.14 |
| 申请号 |
JP20100261323 |
申请日期 |
2010.11.24 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MIYAZAKI TOMIHITO;SHIOMI HIROSHI;TAMASO HIDETO;MASUDA TAKEYOSHI |
| 分类号 |
H01L21/304;H01L21/28;H01L21/306;H01L21/3065;H01L21/31;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L21/304 |
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