发明名称 DE-EMBEDDING ON-WAFER DEVICES
摘要 A transmission line is provided. In one embodiment, the transmission line comprises a substrate, a well within the substrate, a shielding layer over the well, and a plurality of intermediate metal layers over the shielding layer, the plurality of intermediate metal layers coupled by a plurality of vias. The transmission line further includes a top metal layer over the plurality of intermediate metal layers. A test structure for de-embedding an on-wafer device, and a wafer are also disclosed.
申请公布号 US2012146680(A1) 申请公布日期 2012.06.14
申请号 US20100963511 申请日期 2010.12.08
申请人 YEN HSIAO-TSUNG;LIN YU-LING;KUO CHIN-WEI;CHEN HO-HSIANG;LIU SA-LLY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YEN HSIAO-TSUNG;LIN YU-LING;KUO CHIN-WEI;CHEN HO-HSIANG;LIU SA-LLY
分类号 G01R31/00 主分类号 G01R31/00
代理机构 代理人
主权项
地址