发明名称 CHARGE PUMP CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a charge pump circuit capable of generating an output voltage of a desired voltage level over a wide range. <P>SOLUTION: The charge pump circuit includes: charge pull-up transistors P1, P2 in which a drain current is controlled according to each of first and second control signals; charge transfer transistors N1, N2 in which a drain current is controlled according to each of third and fourth control signals; a capacitor C1 provided between a node A and a forward direction clock input terminal CLK; a capacitor C2 provided between a node B and a reversion clock input terminal CLKB; and first-fourth gate voltage control circuits for outputting each of the first-fourth control signals. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012115046(A) 申请公布日期 2012.06.14
申请号 JP20100261965 申请日期 2010.11.25
申请人 RENESAS ELECTRONICS CORP 发明人 FUKUSHI TETSUO;OKUMA NAOKI;KIKUCHI KAZUKI
分类号 H02M3/07 主分类号 H02M3/07
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