发明名称 HIGH FREQUENCY SEMICONDUCTOR SWITCH CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To reduce the size and power consumption of a high-function and high-frequency semiconductor switch circuit which can simultaneously bring two pairs or more of path-switching FET stages into a conductive state without adding a power terminal. <P>SOLUTION: A diode switch logic circuit 100 brings at least one path between a common input/output terminal 101 and individual input/output terminals 102-104 into a conductive state. Accordingly, each control voltage of control terminals 105-107 is applied to each gate of path-switching FET stages 108-110 and logical composite voltage of the control voltage of the control terminals 105-107 is applied to each gate of shunt FET stages 111-113. Moreover, the logical composite voltage is generated by a logical product of: negation of the control voltage applied to a pair of the shunt FET stages and logical addition of the control voltage applied to the other pairs of the shunt FET stages. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012114729(A) 申请公布日期 2012.06.14
申请号 JP20100262705 申请日期 2010.11.25
申请人 PANASONIC CORP 发明人 MIYAZAKI TAKAHITO
分类号 H03K17/693 主分类号 H03K17/693
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