| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce lowering of output and generation efficiency of a photoelectric conversion device. <P>SOLUTION: A photoelectric conversion device comprises: a first electrode layer and a second electrode layer that are spaced apart from each other on a substrate; a first stacked portion in which a first semiconductor layer and a first transparent conductive layer are sequentially stacked on the first electrode layer; a second stacked portion in which a second semiconductor layer, which is spaced apart from the first semiconductor layer, and a second transparent conductive layer are sequentially stacked on the second electrode layer; a third stacked portion in which a third semiconductor layer, which is spaced apart from the second stacked portion via an isolation region, and a third transparent conductive layer are sequentially stacked on the second electrode layer; a first linear conductive portion electrically connected to the second electrode layer via a space between the first semiconductor layer and the second semiconductor layer from over the first stacked portion to over the second stacked portion; and at least one second linear conductive portions on the third stacked portion. The distance between the first linear conductive portion and the second linear conductive portion nearest the first linear conductive portion in at least one second linear conductive portions is larger than that between the second stacked portion and the third stacked portion. <P>COPYRIGHT: (C)2012,JPO&INPIT |
