3-D NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A three-dimensional (3-D) non-volatile memory device includes a plurality of word line structures extended in parallel and including a plurality of interlayer dielectric layers and a plurality of word lines that are alternately stacked over a substrate, a plurality of channels protruding from the substrate configured to penetrate the plurality of interlayer dielectric layers and the plurality of word lines, and an air gap formed between the plurality of word line structures.