发明名称 INTERCONNECT STRUCTURE
摘要 A microelectronic assembly 10 includes a first surface 22 and a first thin conductive element 52 exposed at the first surface 22 and having a face 54 comprising first and second regions. A first conductive projection 56 having a base 58 connected to and covering the first region of the face 54 extends to an end 62 remote from the base. A first dielectric material layer 40 covers the second region of the first thin element 52 and contacts at least the base 58 of the first conductive projection 56. The assembly 10 further includes a second substrate 18 having a second face 24 and a second conductive projection 76 extending away from the second face 24. A first fusible metal mass 70 connects the first projection 56 to the second projection 76 and extends along an edge of the first projection 56 towards the first dielectric material layer 40.
申请公布号 WO2012078876(A1) 申请公布日期 2012.06.14
申请号 WO2011US63953 申请日期 2011.12.08
申请人 TESSERA, INC.;GUPTA, DEBABRATA;HASHIMOTO, YUKIO;MOHAMMED, ILYAS;MIRKARIMI, LAURA;KATKAR, RAJESH 发明人 GUPTA, DEBABRATA;HASHIMOTO, YUKIO;MOHAMMED, ILYAS;MIRKARIMI, LAURA;KATKAR, RAJESH
分类号 H01L23/498;H01L21/60 主分类号 H01L23/498
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