| 摘要 |
A semiconductor device for a high voltage application includes a doped source base region, an N+ source region, a P+ source region and a gate structure. The doped source base region has P-type. The N+ source region extends downwards into the doped source base region. The P+ source region is close to the N+ source region, extends downwards into the doped source base region, and is doped heavier than the doped source base region. The gate structure is coupled to the N+ source region and is near to the P+ source region. |
