Non-volatile memory device for e.g. memory card for storing data, has oxidization-resistant distance holder covering side walls of metal gate and positioned between control gate mask pattern and base gate

摘要

The device has a charge packed memory region (110a) placed between a control gate electrode (137) and a semiconductor substrate (100) i.e. silicon substrate. A control gate mask pattern is placed on the control gate electrode that includes a control metal gate, which is placed on a control base gate (120a), where width of the control metal gate is smaller than width of the control gate mask pattern. An oxidization-resistant distance holder (135a) covers side walls of the control metal gate and positioned between the mask pattern and the control base gate. Independent claims are also included for the following: (1) a method for manufacturing a non-volatile memory device (2) a memory system comprising a memory controller.