| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light extraction efficiency of a semiconductor light-emitting element. <P>SOLUTION: In a semiconductor light-emitting element in which a semiconductor layer is formed on a substrate having a crystal growth surface of a non-polar plane or a semipolar plane, a semiconductor layer has a first side surface and a second side surface, and the average inclination of the second side surface is larger than that of the first side surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
