发明名称 SEMICONDUCTOR ENCAPSULATING NON-LEAD GLASS AND SEMICONDUCTOR ENCAPSULATING COATING TUBE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor encapsulating non-lead glass and a semiconductor encapsulating coating tube which are able to encapsulate a semiconductor element at a low temperature, have superior acid resistance, and in which crystals hardly precipitate during glass tube formation. <P>SOLUTION: The present invention is characterized by the glass composition containing, by mol%, 45-58% of SiO<SB POS="POST">2</SB>, 0-6% of Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>, 14.5-30% of B<SB POS="POST">2</SB>O<SB POS="POST">3</SB>, 0-3% of MgO, 0-3% of CaO, 4.2-14.2% of ZnO, 5-12% of Li<SB POS="POST">2</SB>O, 0-15% of Na<SB POS="POST">2</SB>O, 0-7% of K<SB POS="POST">2</SB>O, 15-30% of Li<SB POS="POST">2</SB>O+Na<SB POS="POST">2</SB>O+K<SB POS="POST">2</SB>O, and 0.1-8% of TiO<SB POS="POST">2</SB>, wherein ZnO/Li<SB POS="POST">2</SB>O is in the range of 0.84-2. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012111681(A) 申请公布日期 2012.06.14
申请号 JP20110236616 申请日期 2011.10.28
申请人 NIPPON ELECTRIC GLASS CO LTD 发明人 HASHIMOTO KOICHI;KITACHI KUMIKO
分类号 C03C3/093;C03C3/089;C03C8/24;H01L23/29;H01L23/31 主分类号 C03C3/093
代理机构 代理人
主权项
地址