摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a threshold voltage of an n-type MIS transistor from increase even when a gate width becomes small in a semiconductor apparatus including the n-type MIS transistor including a gate insulator film including a high dielectric constant insulator film including metal for threshold voltage adjustment. <P>SOLUTION: An n-type MIS transistor nTr includes: an active region 1a that is surrounded by an element isolation region 32 in a semiconductor substrate 1; a gate insulator film 13a that is formed on the active region 1a and on the element isolation region 32 and includes a high dielectric constant insulator film 12a; and a gate electrode 16a formed on the gate insulator film 13a. An n-type impurity region 28 is formed on a portion located at least at lower part of the gate insulator film 13a, of a portion that comes into contact with the element isolation region 32 in the active region 1a. <P>COPYRIGHT: (C)2012,JPO&INPIT |