| 摘要 |
<p>An insulated gate bipolar transistor (IGBT) is disclosed. The IGBT includes a substrate containing a substrate layer and an epitaxial layer formed on one side of the substrate layer. The IGBT also includes a well region formed in the epitaxial layer, and a gate region formed over a junction between the well region and the epitaxial layer. Further, the IGBT includes a collector drift region formed in the epitaxial layer, and an emitter drift region formed in the well region. The IGBT also includes a collector formed on the collector drift region, an emitter formed on the emitter drift region, and a gate formed on the gate region. The collector, the emitter, and the gate are arranged at a same side of the substrate layer.</p> |
