| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an n-type oxide semiconductor (an n-type thermoelectric conversion element) providing higher thermoelectric conversion characteristics and containing zinc oxide having a high heat resistance as a main component, compared with a conventional n-type oxide semiconductor containing zinc oxide as a main component. <P>SOLUTION: A surface of a base 11 containing zinc oxide as a main component is covered with a coating part 12 made of metal oxide so as to suppress reoxidation of the zinc oxide constituting the base. The metal oxide is a metal oxide of a metal element of transition metal elements of the group-4A, the group-5A, and the group-6A and typical metal elements of the group-4B in the periodic table, and whose valence is tetravalent or pentavalent or hexavalent. <P>COPYRIGHT: (C)2012,JPO&INPIT |
