| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a SOI wafer, in which an organic substance that is a gettering site source can be absorbed onto a bonding interface between bonded SOI wafers in an in-plane uniform and stable manner. <P>SOLUTION: A method for manufacturing a SOI wafer by bonding two silicon wafers, comprises: directly spraying an organic substance containing gas onto a surface of at least one wafer of the two silicon wafers while rotating the wafer to absorb a predetermined amount of an organic substance onto the wafer; and then bonding the two wafers. The method may comprise spraying the organic substance containing gas while swinging a gas supply nozzle a plurality of times at a prescribed cycle in a radial direction of the wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
