| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a multilayer wiring structure, that has high reliability, high manufacturing yield, and small restriction of designing, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises: wiring 20, 40, 60, and 80 formed on a substrate 10; low dielectric constant films 12, 32, 52, 72, and 92 formed around the wiring 20, 40, 60, and 80; reinforcement insulating films 42a, 62a, 82a, and 102a that are formed by a dielectric material with larger elastic coefficient than the formation material of the low dielectric constant films 12, 32, 52, 72, and 92 and are disposed so as to overlap the wiring 20, 40, 60, and 80 as viewed perpendicularly to a surface of the substrate; and reinforcement insulating films 22b, 42b, 62b, 82b, and 102b disposed so as to cross the wiring 20, 40, 60, and 80. <P>COPYRIGHT: (C)2012,JPO&INPIT |
