发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH SIDE CONTACT
摘要 A semiconductor device includes an active region having a side contact region in a sidewall thereof, wherein the side contact has a bulb shape, an ohmic contact region formed over a surface of the side contact region, and a bitline connected to the active region through the ohmic contact.
申请公布号 US2012146221(A1) 申请公布日期 2012.06.14
申请号 US201113277707 申请日期 2011.10.20
申请人 SHIM SEUNG-HYUN 发明人 SHIM SEUNG-HYUN
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
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