发明名称 |
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention comprises the steps (a)-(c) described below and is characterized in that the crystal orientation of a first dopant implanted layer (52) is the same as the crystal orientation of a semiconductor layer or a base (10) that is formed of a semiconductor element. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base. |
申请公布号 |
WO2012077797(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
WO2011JP78599 |
申请日期 |
2011.12.09 |
申请人 |
TEIJIN LIMITED;TOMIZAWA, YUKA;IKEDA, YOSHINORI;IMAMURA, TETSUYA |
发明人 |
TOMIZAWA, YUKA;IKEDA, YOSHINORI;IMAMURA, TETSUYA |
分类号 |
H01L21/208;C01B33/02;H01L21/336;H01L29/786;H01L31/04 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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