发明名称 LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
摘要 The present invention pertains to a laser annealing device that performs annealing by irradiating an amorphous silicon film formed on a TFT substrate with a plurality of laser beams (Lb), said laser annealing device being provided with: a mask (3) having a plurality of similarly-shaped openings formed in the shape of the region to be annealed on the TFT substrate (10); a microlens substrate (4) for focusing the plurality of laser beams (Lb) that has passed through the plurality of openings in the mask (3) on the TFT substrate (10) via the plurality of microlenses formed on one surface, and providing constant light energy to the amorphous silicon substrate; a pair of guides (25) having a semi-cylindrical shape, said guides being disposed opposite each other with the axes thereof approximately parallel in a position on both sides of the microlens substrate (4) so as to sandwich the microlens substrate (4), and the apexes of which protrude on the TFT substrate (10) side more than the position of the apexes of the microlenses; and a film (22) that is movably connected between the pair of guides (25) in a tensioned state, and through which the laser beams (Lb) are transmitted. Thus, the energy irradiated by the laser beams is easily maintained, and irradiation pattern shape disturbances are minimized.
申请公布号 WO2012077495(A1) 申请公布日期 2012.06.14
申请号 WO2011JP76921 申请日期 2011.11.22
申请人 V TECHNOLOGY CO., LTD.;MIZUMURA, MICHINOBU;SAITO, YUJI 发明人 MIZUMURA, MICHINOBU;SAITO, YUJI
分类号 H01L21/20;B23K26/00;B23K26/04;B23K26/06;B23K101/40;H01L21/268 主分类号 H01L21/20
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