| 摘要 |
The invention relates to a method for producing a metal-wrap-through-solar cell consisting of a p-doped or n-doped silicon substrate (1), which has a first main surface (2) that serves as a light incidence side when used and a second main surface (3) that serves as the back. Said method consists of the following steps: a thin layer (5) which is essentially made of aluminium is applied to the second main surface (3), the aluminium thin layer (5) is removed from parts of the second main surface (3) for forming hole areas (9) having a first diameter (d1) in which the silicon substrate (1) is released, a dielectric, gas-forming paste (11) is applied to and dried on the aluminium thin layer (5) for covering the thin layer (5) and parts of the silicon substrate (1), resulting in the hole areas (9) being reduced in size to a second diameter (d2), forming interconnecting holes (10) through the silicon substrate (1) in the hole areas (9), in particular by means of a laser (13), the paste (11) on the second main surface (3) is heated and/or sintered (11), in particular to temperatures over approximately 577 °C, for producing an aluminium doping layer (6) in the second main surface (3), and the glass layer (12) and an aluminium silicon eutectic layer formed from heating and/or sintering is removed from the second main surface (3) thus releasing the aluminium doping layer (6). |
