发明名称 Substrate Support with Gas Introduction Openings
摘要 Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
申请公布号 US2012149194(A1) 申请公布日期 2012.06.14
申请号 US201213401755 申请日期 2012.02.21
申请人 KIM SAM H.;WHITE JOHN M.;CHOI SOO YOUNG;SORENSEN CARL A.;TINER ROBIN L.;PARK BEOM SOO;APPLIED MATERIALS, INC. 发明人 KIM SAM H.;WHITE JOHN M.;CHOI SOO YOUNG;SORENSEN CARL A.;TINER ROBIN L.;PARK BEOM SOO
分类号 H01L21/28 主分类号 H01L21/28
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