发明名称 EMBEDDED DRAM HAVING LOW POWER SELF-CORRECTION CAPABILITY
摘要 <p>Apparatuses and methods for low power combined self-refresh and self-correction of a Dynamic Random Access Memory (DRAM) array. During a self-refresh cycle, a first portion of a first row of the DRAM array is accessed and analyzed for one or more errors, wherein a bit width of the first portion is less than a bit width of the first row. If one or more errors are detected, the one or more errors are corrected to form a corrected first portion. The corrected first portion is selectively written back to the first row. If no errors are detected in the first portion, a write back of the first portion to the first row is prevented.</p>
申请公布号 WO2012079063(A1) 申请公布日期 2012.06.14
申请号 WO2011US64303 申请日期 2011.12.12
申请人 QUALCOMM INCORPORATED;SUH, JUNGWON 发明人 SUH, JUNGWON
分类号 G11C11/406 主分类号 G11C11/406
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