| 摘要 |
PURPOSE: A gas supply unit of a chemical vapor deposition apparatus and a manufacturing method thereof are provided to improve wafer deposition quality by uniformly supplying each process gas to a process space. CONSTITUTION: A plurality of nozzles is formed on a first plate. A second plate is installed on the upper side of the first plate. Both ends of a first tube(170) are respectively brazed and connected to the first plate and the second plate. A second tube(180) is respectively brazed and connected to the first plate and the second plate. A third plate comprises a plurality of penetration holes which penetrates the second tube. A sealing member(200) maintains an airtight state between the second tube and the penetration hole by being installed on the upper surface of the third plate. A cover member(140) pressurizes the sealing member by being mounted on the upper side of the third plate.
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