发明名称 STRUCTURE AND LAYOUT OF A FET PRIME CELL
摘要 Method of making a semiconductor device that includes forming a source and a drain in a substrate, forming a gate on the substrate between the source and drain, forming a substrate contact in electrical contact with the source, and forming an electrical contact to the source, drain and gate, and the substrate.
申请公布号 US2012146104(A1) 申请公布日期 2012.06.14
申请号 US201213398408 申请日期 2012.02.16
申请人 JAGANNATHAN BASANTH;PEKARIK JOHN J.;SCHNABEL CHRISTOPHER M.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 JAGANNATHAN BASANTH;PEKARIK JOHN J.;SCHNABEL CHRISTOPHER M.
分类号 H01L29/06 主分类号 H01L29/06
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