| 摘要 |
A semiconductor device has a substrate with a first and second recess formed in a surface of the substrate using a wet etch process. The second recess can have a size different from a size of the first recess. A plurality of conductive vias are formed in a surface of the first and second recesses using a dry etch process. A first conductive layer is formed over the surface of the substrate, over curved side walls of the first and second recesses, and electrically connected to the plurality of conductive vias. A first and second semiconductor die are mounted into the first and second recesses respectively. The second semiconductor die can have a size different from a size of the first semiconductor die. The first and second semiconductor die are electrically connected to the first conductive layer. An interconnect structure is electrically connected to the plurality of conductive vias. |
