发明名称 |
METHOD AND APPARATUS FOR FORMING A III-V FAMILY LAYER |
摘要 |
Provided is an apparatus. The apparatus includes: a first deposition component that is operable to form a compound over a semiconductor wafer, the compound including at least one of: a III-family element and a V-family element; a second deposition component that is operable to form a passivation layer over the compound; and a transfer component that is operable to move the semiconductor wafer between the first and second deposition components, the transfer component enclosing a space that contains substantially no oxygen and substantially no silicon; wherein the loading component, the first and second deposition components, and the transfer component are all integrated into a single fabrication tool. |
申请公布号 |
US2012149176(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US20100964994 |
申请日期 |
2010.12.10 |
申请人 |
CHEN CHI-MING;YU CHUNG-YI;TSAI CHIA-SHIUNG;HWANG HO-YUNG DAVID;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHI-MING;YU CHUNG-YI;TSAI CHIA-SHIUNG;HWANG HO-YUNG DAVID |
分类号 |
H01L21/20;C23C16/34 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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