发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method of manufacturing a semiconductor device according to an embodiment includes: forming a plurality of semiconductor layers located at a distance from one another on a first insulating film; forming a gate insulating film that covers both side faces and an upper face of each of the semiconductor layers; forming a gate electrode of a polysilicon film to cover the gate insulating film of each of the semiconductor layers; forming a second insulating film on an entire surface; exposing an upper face of the gate electrode by performing selective etching on a portion of the second insulating film; siliciding the gate electrode; and forming a stress applying film that applies a stress in a direction perpendicular to the extending direction of each of the semiconductor layers and parallel to an upper face of the first insulating film. |
申请公布号 |
US2012146114(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201213401478 |
申请日期 |
2012.02.21 |
申请人 |
NAKABAYASHI YUKIO;NUMATA TOSHINORI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKABAYASHI YUKIO;NUMATA TOSHINORI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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