| 摘要 |
<p>1,004,832. Semiconductor devices. CLEVITE CORPORATION. April 2, 1962 [May 18,1961], No. 12638/62. Heading H1K. In a photosensitive PNPN switching diode at least one of the outer junctions has a smaller area than the middle junction and at least part of at least one of the layers adjacent the middle junction is thin enough to allow photons to enter the space charge layer of the junction and there generate electron-hole pairs. A device of the type shown in Fig. 1 is formed from a P-type wafer by diffusion of donor impurity into both faces to form an NPN structure with oxide layers over the N zones and etching to expose spaced areas of the N zones into which acceptor impurity is then diffused. After cleaning the resulting wafer is subdivided and each element formed therefrom provided with electrodes. In an alternative method parts of the outer zones of a PNPN block are masked and the block etched to the form shown in Fig. 6.</p> |
