NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To obtain a high density drain current in an enhancement type nitride semiconductor field effect transistor formed on a normal polar face (i.e. the c-axis direction).

SOLUTION: In the direction of polar face above a channel layer semiconductor 6 consisting of a nitride semiconductor, a barrier layer semiconductor 5 is laminated which includes a nitride semiconductor having a band gap larger than that of the channel layer semiconductor 6. The barrier layer semiconductor 5 existing in a first region 21 covering at least a part of an element region existing below a gate electrode 2 is formed thinner than the barrier layer semiconductor 5 existing in a second region 22 covering an element region other than the first region 21, or the barrier layer semiconductor 5 does not exist in the first region 21. In the barrier layer semiconductor 5 existing in the second region 22, a quantum well structure is formed into which a quantum well 7 of single layer having a band gap smaller than that of the barrier layer semiconductor 5 or a multiple quantum well of multiple layers is inserted.

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