发明名称 |
NON-VOLATILE MEMORY DEVICE WITH HIGH SPEED OPERATION AND LOWER POWER CONSUMPTION |
摘要 |
A semiconductor memory device has a memory cell region and a peripheral region. The device includes low voltage transistors at the peripheral region having gate insulation films with different thicknesses. For example, a gate insulation film of a low voltage transistor used in an input/output circuit of the memory device may be thinner than the gate insulation film of a low voltage transistor used in a core circuit for the memory device. Since low voltage transistors used at an input/output circuit are formed to be different from low voltage transistors used at a core circuit or a high voltage pump circuit, high speed operation and low power consumption characteristics of a non-volatile memory device may be.
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申请公布号 |
US2012146118(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113248333 |
申请日期 |
2011.09.29 |
申请人 |
LEE CHANG-HYUN;PARK YOUNG-WOO;KYUNG KYE-HYUN;LEE CHEON-AN;CHANG SUNG-IL;KIM CHUL BUM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;PARK YOUNG-WOO;KYUNG KYE-HYUN;LEE CHEON-AN;CHANG SUNG-IL;KIM CHUL BUM |
分类号 |
H01L27/108;H01L27/092 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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