| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.
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| 申请公布号 |
US2012146196(A1) |
申请公布日期 |
2012.06.14 |
| 申请号 |
US201113230973 |
申请日期 |
2011.09.13 |
| 申请人 |
LEE KEE-JEUNG;HONG KWON;PARK KYUNG-WOONG;AHN JI-HOON |
发明人 |
LEE KEE-JEUNG;HONG KWON;PARK KYUNG-WOONG;AHN JI-HOON |
| 分类号 |
H01L29/02;H01L21/314;H01L21/328 |
主分类号 |
H01L29/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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