| 摘要 |
A surface wave plasma CVD apparatus, includes: a waveguide (3) that is connected to a microwave source (2), and in which a plurality of slot antennas (S) are formed thereof; a dielectric plate (4) for conducting microwaves emitted from the plurality of slot antennas (S) into a plasma processing chamber (1) so that a surface wave plasma is produced; an insulating shield member (lb) that is arranged so as to surround a layer formation processing region (R) in which the surface wave plasma is produced; and a gas ejection portion (52) that ejects process material gas into the layer formation processing region (R). |
