发明名称 |
METHOD AND A STRUCTURE FOR ENHANCING ELECTRICAL INSULATION AND DYNAMIC PERFORMANCE OF MIS STRUCTURES COMPRISING VERTICAL FIELD PLATES |
摘要 |
In an MIS structure a field plate electrode is incorporated below a buried gate electrode by using an insulating oxide layer, which is formed concurrently with the gate dielectric layer. In order to obtain superior dynamic behavior and enhanced dielectric strength the oxidation behavior of the field plate electrode is modified, for instance by incorporating a desired high concentration of arsenic. |
申请公布号 |
US2012146135(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113324896 |
申请日期 |
2011.12.13 |
申请人 |
BORZI ANNA;COCCORESE CORRADO;MORALE GIUSEPPE;REPICI DOMENICO;STMICROELECTRONICS S.R.L. |
发明人 |
BORZI ANNA;COCCORESE CORRADO;MORALE GIUSEPPE;REPICI DOMENICO |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|