发明名称 |
Local Bottom Gates for Graphene and Carbon Nanotube Devices |
摘要 |
Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided. |
申请公布号 |
US2012145998(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201213364273 |
申请日期 |
2012.02.01 |
申请人 |
CHEN ZHIHONG;FRANKLIN AARON D.;HANNON JAMES B.;TULEVSKI GEORGE S.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN ZHIHONG;FRANKLIN AARON D.;HANNON JAMES B.;TULEVSKI GEORGE S. |
分类号 |
H01L29/78;B82Y99/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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