发明名称 |
HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF |
摘要 |
Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate.
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申请公布号 |
US2012145991(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201013392059 |
申请日期 |
2010.08.27 |
申请人 |
NAM OK HYUN;JANG JONG JIN;SEOUL OPTO DEVICE CO., LTD. |
发明人 |
NAM OK HYUN;JANG JONG JIN |
分类号 |
H01L33/06;H01L33/14 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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