发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A compound semiconductor device is provided with a compound semiconductor layer and a gate electrode formed on the compound semiconductor layer via a gate insulating film, in which the gate insulating film is one in which SixNy is contained as an insulating material, SixNy is 0.638≦̸x/y≦̸0.863, and a hydrogen-terminated group concentration is set to a value within a range of not less than 2×1022/cm3 nor more than 5×1022/cm3.
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申请公布号 |
US2012146728(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113278392 |
申请日期 |
2011.10.21 |
申请人 |
MAKIYAMA KOZO;KIKKAWA TOSHIHIDE;FUJITSU LIMITED |
发明人 |
MAKIYAMA KOZO;KIKKAWA TOSHIHIDE |
分类号 |
H03F3/16;H01L21/336;H01L29/778 |
主分类号 |
H03F3/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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