发明名称 |
NON-VOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME |
摘要 |
A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.
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申请公布号 |
US2012146125(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113212639 |
申请日期 |
2011.08.18 |
申请人 |
KIM MINCHUL;SIM JAE-HWANG;SONG SANGBIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM MINCHUL;SIM JAE-HWANG;SONG SANGBIN |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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