| 摘要 |
The invention relates to a process for treating a structure semiconductor on insulator comprising a support substrate (1), a layer (2) of oxide or oxynitride of semiconductor material and a thin layer (3) of said semiconductor material. Said process comprises the application of thermal treatment in an atmosphere having fewer than 10 ppm oxygen, and in controlled conditions (temperature, duration), so as to cause at least part of the oxygen of the layer of oxide or oxynitride (2) to be diffused through the thin layer, resulting in decreasing the thickness of oxide or oxynitride in regions (2B) of the layer of oxide or oxynitride (2) distributed according to a determined pattern. Said process comprises the formation on the surface of the thin layer (3) of zones (3B) distributed according to said pattern and exposing a crystallographic orientation different to the rest of the surface (3A) of the thin layer (3). |
