| 摘要 |
A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer. |
