发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A method for fabricating a semiconductor device, the method comprising: forming a metal containing film on a substrate; exposing the metal containing film to an ammonia radical in a reaction chamber; evacuating gas generated in the exposing by supplying an inert gas into the reaction chamber; and after repeating the exposing and the supplying a predetermined number of times, forming a silicon nitride film covering the metal containing film in the reaction chamber without atmospheric exposure. |
申请公布号 |
US2012146113(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201213397890 |
申请日期 |
2012.02.16 |
申请人 |
SUZUKI JUN;SAKURAI TAKAAKI;PANASONIC CORPORATION |
发明人 |
SUZUKI JUN;SAKURAI TAKAAKI |
分类号 |
H01L29/78;H01L21/285 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|