| 摘要 |
<p>PURPOSE: A semiconductor device and a formation method thereof are provided to utilize a new structure for maximizing channel area of a pillar. CONSTITUTION: A pillar(12) is arranged on the upper part of a semiconductor substrate. The pillar comprises first to fourth side surfaces. A first bit line(22) is arranged on the first side surface of the pillar. A storage electrode junction area is arranged on the third side surface of the pillar. A gate(34) is arranged on the second or fourth side surface of the pillar. A second bit line(24) is connected to the lower end part of the first bit line.</p> |
