发明名称 |
MEASUREMENT OF CMOS DEVICE CHANNEL STRAIN BY X-RAY DIFFRACTION |
摘要 |
A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices. |
申请公布号 |
US2012146050(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US20100967323 |
申请日期 |
2010.12.14 |
申请人 |
ADAM THOMAS N.;BEDELL STEPHEN W.;HARLEY ERIC C.;HOLT JUDSON R.;MADAN ANITA;MURRAY CONAL E.;PINTO TERESA L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM THOMAS N.;BEDELL STEPHEN W.;HARLEY ERIC C.;HOLT JUDSON R.;MADAN ANITA;MURRAY CONAL E.;PINTO TERESA L. |
分类号 |
H01L29/161;G01N23/20 |
主分类号 |
H01L29/161 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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