EUV LITHOGRAPHY SYSTEM

摘要

An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51. The EUV beam path comprises a mirror system 13, which has a base and a multiplicity of mirror elements 17 having concave mirror surfaces, the orientation of which relative to the base is respectively adjustable. The monitor beam path 51 comprises at least one monitor radiation source 53, a screen 71, the mirror system 13, which is arranged in the monitor beam path 51 between the monitor radiation source 53 and the screen 71, and a spatially resolving detector 77. In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.