METHOD OF MANUFACTURING HIGH FREQUENCY DEVICE STRUCTURES

摘要

PURPOSE: A manufacturing method of a high frequency device structure is provided to reduce initial reaction energy with a substrate material while diffusing Pt/Pd in a thermal process, thereby stably manufacturing a normally-off type high frequency device. CONSTITUTION: A Schottky barrier layer, an etch-stop layer(106), an ohmic layer(107), and an ohmic electrode are formed on a substrate. A first recess is formed in order to expose a part of the etch-stop layer. A second recess is formed in order to expose a part of the Schottky barrier slayer after forming a gate pattern on the first recess. A gate electrode(115) is formed by depositing a heat resistant metal film after forming a super lattice film by alternately depositing Pt and Pd on the second recess and the gate pattern.